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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF9210/D
The RF MOSFET Line
RF Power Field Effect Transistor
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment. * Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 950 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 40 Watts Power Gain -- 16.5 dB Efficiency -- 25.5% Adjacent Channel Power -- 750 kHz: - 46.2 dBc @ 30 kHz BW 1.98 MHz: - 60 dBc @ 30 kHz BW * Internally Matched, Controlled Q, for Ease of Use * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts Avg. N - CDMA * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature
N - Channel Enhancement - Mode Lateral MOSFET
MRF9210R3
880 MHz, 200 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375G - 04, STYLE 1 NI - 860C3
Symbol VDSS VGS PD Tstg TJ
Value 65 - 0.5, +15 565 3.2 - 65 to +150 200
Unit Vdc Vdc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (1) 0.31 Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum)
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
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MRF9210R3 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 800 mAdc) VGS(th) VGS(Q) VDS(on) gfs 1.5 2.5 -- -- 2.8 3.3 0.2 8.8 4 4.5 0.4 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6.7 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
--
3.6
--
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier, Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF N - CDMA Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) N - CDMA Drain Efficiency (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) N - CDMA Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) N - CDMA Drain Efficiency (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Each side of device measured separately. (2) Device measured in push - pull configuration. Gps 15.8 16.5 -- dB
23
25.5
--
%
ACPR
--
- 46.2
- 45
dBc
IRL
9
17.5
--
dB
Gps
--
16.5
--
dB
--
25.5
--
%
ACPR
--
- 47.5
--
dBc
IRL
--
15
--
dB
No Degradation In Output Power
MRF9210R3 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
Table 1. 880 MHz Test Circuit Component Designations and Values
Part B1, B2 Balun 1, Balun 2 C1 C2 C3, C4 C5 C6 C7 C8 C9, C10 C11, C12, C13, C14 C15, C17, C19, C21 C16, C18 Description 11 RF Beads, Surface Mount (0805) 0.8 - 1 GHz Xinger Balun 27 pF Chip Capacitor, B Case 12 pF Chip Capacitor (0603) 3.3 pF Chip Capacitors (0603) 9.1 pF Chip Capacitor, R Case 4.3 pF Chip Capacitor, B Case 0.4 - 2.5 pF Variable Capacitor 12 pF Chip Capacitor, B Case 470 F, 63 V Electrolytic Capacitors 22 F, 35 V Tantalum Chip Capacitors 0.01 F, 100 V Chip Capacitors 0.56 F, 50 V Chip Capacitors 2.2 F, 50 V Chip Capacitors 47 F, 16 V Tantalum Chip Capacitors 12 nH Inductor (0603) 22 nH Inductor 12.5 nH Inductors 10 nH Inductors (0603) 30 mil, r = 2.56 30 mil, r = 2.56 24 , 1/8 W Chip Resistors Value, P/N or DWG 2508051107Y0 3A412 100B270JP500X 06035J120GBT 06035J3R3BBT 180R8R2JW500X 100B4R3CP500X 27283PC 100B120JP500X NACZF471M63V (18x22) T491X226K035AS C1825C103J1GAC C1825C564J5GAC C1825C225J5RAC3810 TPSD476K016R0150 0603HC- 12NHJBU B07T - 5 A04T - 5 0603HC- 10NHJBU DS0928 DS0978 Manufacturer Fair - Rite Anaren ATC AVX / Kyocera AVX / Kyocera ATC ATC Gigatronics ATC Nippon Kemet Kemet Kemet Kemet AVX Coilcraft Coilcraft Coilcraft Coilcraft DS Electronics DS Electronics Dale Vishay
Freescale Semiconductor, Inc...
C20, C22 C23, C24 L1 L2 L3, L4 L5, L6 PCB Gate PCB Drain R1, R2
MRF9210 Gate
MRF9210 Drain C14 C13 C16 C22
VGG
VDD
C23 Balun 1
C21
L6 R1
C3 C15 B1 L3 Balun 2
C9
C1 L1
C2 C5
C6 C8 C7 L2
R2 C19 C24 C20 L5 C4
B2
L4 C17 C10 C18
VGG
C12 C11
VDD MRF9210 Rev 3
Figure 1. 880 MHz Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MRF9210R3 3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
18 17 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 9 8 860 865 870 875 880 885 890 895 ACPR IRL Gps VDD = 26 Vdc Pout = 40 W (Avg.) IDQ = 1900 mA N-CDMA IS-95 Pilot, Sync, Paging Traffic Codes 8 Through 13 30 28 26 24 22 -30 -35 -40 -45 -50 -55 900 ACPR (dBc) h , DRAIN EFFICIENCY (%) -10 -15 -20 -25 -30 -35
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 2. Class AB Broadband Circuit Performance
17 G ps , POWER GAIN (dB) 16.5 16 15.5
VDD = 26 Vdc f1 = 879.95 MHz, f2 = 880.05 MHz IDQ = 2200 mA 1900 mA 1600 mA
IMD, INTERMODULATION DISTORTION (dBc)
17.5
-20 VDD = 26 Vdc f1 = 879.95 MHz, f2 = 880.05 MHz -30
-40
-50 IDQ = 1300 mA -60 1600 mA -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 1900 mA 2200 mA
1300 mA 15 14.5 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
Figure 3. Power Gain versus Output Power
Figure 4. Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 -60 -70 -80 -90 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 5th Order 7th Order 3rd Order VDD = 26 Vdc IDQ = 1900 mA f1 = 879.5 MHz, f2 = 880.05 MHz G ps , POWER GAIN (dB)
22 20 18 Gps 16 14 12 10 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 VDD = 26 Vdc IDQ = 1900 mA f = 880 MHz
IRL, INPUT RETURN LOSS (dB)
60 50 40 30 20 10 0 , DRAIN EFFICIENCY (%)
Figure 5. Intermodulation Distortion Products versus Output Power
Figure 6. Power Gain and Efficiency versus Output Power
MRF9210R3 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 1.23 MHz BW -ACPR @ 30 kHz BW +ACPR @ 30 kHz BW 20 18 G ps , POWER GAIN (dB) 16 14 12 10 8 1 IMD 10 Pout, OUTPUT POWER (WATTS) PEP 100 Gps VDD = 26 Vdc IDQ = 1900 mA f1 = 879.5 MHz, f2 = 880.05 MHz 60 40 20 0 -20 -40 -60
Freescale Semiconductor, Inc...
Figure 7. Power Gain, Efficiency and IMD versus Output Power
20 18 G ps , POWER GAIN (dB) Gps 16 14 12 10 8 1
40 20 0 VDD = 26 Vdc, IDQ = 1900 mA f = 880 MHz N-CDMA IS-95 Pilot, Sync, Paging Traffic Codes 8 Through 13 ACPR 750 kHz ALT 1.98 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. -20 -40 -60 -80 100
Figure 8. N - CDMA Performance Output Power versus Gain, ACPR, Efficiency
80 Pout , OUTPUT POWER (WATTS) AVG. 70 60 (dB) 50 40 30 20 10 18 20 22 24 26 28 30 32 34 VDD, VOLTAGE (V) VDD = 26 Vdc, IDQ = 1900 mA f = 880 MHz N-CDMA IS-95 Pilot, Sync, Paging Traffic Codes 8 Through 13
4.8 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -95.2 -2.5 -ALT @ 30 kHz BW
+ALT @ 30 kHz BW
-2.0 -1.5 -1.0
-0.5
0
0.5
1.0
1.5
2.0
2.5
f, FREQUENCY (MHz)
Figure 9. Single - Carrier Maximum N - CDMA Linear Output Power versus Drain Voltage
Figure 10. Typical N - CDMA Spectrum
MOTOROLA RF DEVICE DATA
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MRF9210R3 5
Freescale Semiconductor, Inc.
Zload * f = 895 MHz
f = 865 MHz
Zo = 10
f = 895 MHz
f = 865 MHz Zsource
Freescale Semiconductor, Inc...
VDD = 26 V, IDQ = 2 x 950 mA, Pout = 40 W Avg. N-CDMA f MHz 865 880 895 Zsource 4.19 - j6.71 3.69 - j6.18 3.17 - j5.85 Zload 8.43 - j3.83 8.12 - j3.85 7.84 - j4.08
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
- Z source Z
+ load
Figure 11. Series Equivalent Input and Output Impedance
MRF9210R3 6
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF9210R3 7
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
4 L ccc R
M 2X
G TA
M
B
M
J
1 2
Q bbb
M
TA
M
B
M
(LID) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF
B
5 4X
(FLANGE)
K
4X
3
4
S
(INSULATOR) M
D bbb
M
B TA
M
bbb
TA
M
B
M
B
M
Freescale Semiconductor, Inc...
ccc
M
TA
(LID)
M
B
M
N
F
E
H bbb A
(INSULATOR) M
M
C B
M
T
TA A
M
SEATING PLANE
CASE 375G - 04 ISSUE E NI - 860C3
STYLE 1: PIN 1. 2. 3. 4. 5.
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF9210R3 8
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MOTOROLA RF DEVICE DATA
MRF9210/D

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